A Field Effect Transistor based on the Mott Transition in a Molecular Layer
نویسنده
چکیده
Here we propose and analyze the behavior of a FET–like switching device, the Mott transition field effect transistor, operating on a novel principle, the Mott metal–insulator transition. The device has FET-like characteristics with a low “ON” impedance and high “OFF” impedance. Function of the device is feasible down to nanoscale dimensions. Implementation with a class of organic charge transfer complexes is proposed. PACS:71.30+h, 73.40.Rw, 73.20Dx, 85.65+h, 85.30.Tv Typeset using REVTEX
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